Ukudibana koBuchule: Intsebenziswano yoBugcisa phakathi kwe-Infineon's CoolSiC™ MOSFET G2 kunye ne-YMIN Thin Film Capacitors

Ii-Capacitors zefilimu eziThin ze-YMIN zihambelana ngokugqibeleleyo ne-Infineon's CoolSiC™ MOSFET G2

I-Infineon's New Generation Silicon Carbide CoolSiC™ MOSFET G2 yeyona nto iphambili kwiZinto ezintsha kuLawulo lwaMandla. Ii-YMIN Thin Film Capacitors, ezinoyilo lwazo oluphantsi lwe-ESR, i-voltage ephezulu, i-leaking current ephantsi, uzinzo lobushushu obuphezulu, kunye noxinano oluphezulu lomthamo, zibonelela ngenkxaso enamandla kule mveliso, zinceda ekufezekiseni ukusebenza kakuhle, ukusebenza okuphezulu, kunye nokuthembeka okuphezulu, nto leyo eyenza ukuba ibe sisisombululo esitsha sokuguqulwa kwamandla kwizixhobo ze-elektroniki.

Iimpawu kunye neenzuzo ze-YMINIiCapacitors zeFilimu eziThin

I-ESR ephantsi:
Uyilo oluphantsi lwe-ESR lwe-YMIN Thin Film Capacitors luphatha ngokufanelekileyo ingxolo ephezulu kwizixhobo zamandla, luzalisa ilahleko eziphantsi zokutshintsha zeCoolSiC™ MOSFET G2.

I-Voltage Ephakamileyo kunye nokuvuza okuphantsi:
I-voltage ephezulu kunye neempawu zamandla okuvuza aphantsi ze-YMIN Thin Film Capacitors zonyusa uzinzo lobushushu oluphezulu lwe-CoolSiC™ MOSFET G2, zibonelela ngenkxaso eqinileyo yozinzo lwenkqubo kwiindawo ezinzima.

Uzinzo lobushushu obuphezulu:
Uzinzo oluphezulu lobushushu lwe-YMIN Thin Film Capacitors, kunye nolawulo oluphezulu lobushushu lwe-CoolSiC™ MOSFET G2, luphucula ngakumbi ukuthembeka kunye nozinzo lwenkqubo.

Ubuninzi boMbane oPhezulu:
Ubuninzi obukhulu bee-capacitors zefilimu ezincinci bubonelela ngokuguquguquka okukhulu kunye nokusetyenziswa kwendawo kuyilo lwenkqubo.

Isiphelo

Ii-YMIN Thin Film Capacitors, njengeqabane elifanelekileyo le-Infineon's CoolSiC™ MOSFET G2, zibonisa amandla amakhulu. Ukudibana kwezi zimbini kuphucula ukuthembeka kwenkqubo kunye nokusebenza kwayo, kubonelela ngenkxaso engcono kwizixhobo ze-elektroniki.