IiNgwevu Ezifihlakeleyo Ezisemva Kwamandla Ekhompyutha E-AI: Indlela Eziveliswe Ngayo Ii-Capacitors Eziphezulu Ze-Voltage Ngaphakathi (Φ30×70mm 450V/1400µF, 105℃/3000H) Sombulula Iingxaki Ezintathu Ezinkulu Kwizixhobo Zamandla Zeseva

 

Ngenxa yokukhula ngamandla kwamandla ekhompyutha ye-AI, amaziko edatha afumana uxinzelelo olungazange lubonwe ngaphambili. Njenge "intliziyo yamandla" yeeseva ze-AI, uyilo lombane oluphambili lwe-AC-DC lujongene nemingeni engakaze ibonwe ngaphambili: indlela yokufikelela kuxinano lwamandla aphezulu, ubomi obude, kunye nokuthembeka okunamandla ngaphakathi kwendawo encinci? Oku akusiyongxaki yobuchwephesha kuphela, kodwa kubalulekile nasekuqinisekiseni imveliso eqhubekayo nezinzileyo yamandla ekhompyutha ye-AI.

I-YMIN Electronics, umboneleli ophambili wezisombululo ze-capacitor zasekhaya onamava eminyaka emininzi kwicandelo le-capacitor ye-voltage ephezulu, uqalise uthotho lwe-IDC3 lwee-capacitors ze-aluminium electrolytic ze-high-voltage ukujongana neemfuno ezithile zezixhobo zamandla ze-AI server, ebonelela ngesisombululo sobugcisa esitsha sokusombulula iingxaki zoshishino.

Iimeko Zokusebenza

• Indawo: Indawo yokugcina amandla/i-filter capacitor emva kwe-AC-DC front-end PFC (Power Factor Correction) DC-Link (DC bus) (isisombululo esiqhelekileyo)

• Amandla: 4.5kW–12kW+; Ifomu yento: Umbane we-1U ofakelwe kwi-rack-mount server/umbane ophambili kwiziko ledatha

• Ukuphindaphinda: Njengoko i-GaN (Gallium Nitride)/SiC (Silicon Carbide) isetyenziswa kakhulu, ukuphindaphinda kokutshintsha kudla ngokuba phakathi kwamashumi e-kHz ukuya kumakhulu e-kHz (kuxhomekeke kwiprojekthi; eli nqaku likhankanya iinkcukacha ezifana ne-120kHz)

• Ukusebenza kunye nobushushu: Iziko ledatha lidla ngokusebenza iiyure ezingama-24 ngosuku, iintsuku ezisixhenxe ngeveki; umbane unobushushu obuphezulu bangaphakathi, nto leyo efuna ingqalelo kubushushu be-capacitor/ukutshintsha kobomi bonke (iimeko eziqhelekileyo zokusebenza kobushushu obuphezulu)

Imingeni Emithathu Emikhulu: Ukutyhila Ingxaki Yombane Ophezulu Kwi-AI Server Power Supply Design

Kuyilo lwamacandelo e-AC-DC ezixhobo zombane zeseva ye-AI kunye nezixhobo zombane eziphambili zeziko ledatha, iinjineli ngokubanzi zijongene nemingeni emithathu emikhulu:

① Ukuphikisana phakathi kwendawo kunye nomthamo: Kwindawo evalekileyo yeseva ye-rack-mount ye-1U, ii-capacitor ze-horn eziqhelekileyo zihlala zijongene nengxaki yobukhulu obulinganiselweyo. Ukufikelela kumthamo owaneleyo wokugcina amandla ngaphakathi kobude obulinganiselweyo ngumceli mngeni obalulekileyo ekufuneka woyiswe xa kuqulunqwa izixhobo zamandla ezinobunzima obuphezulu.

② Imingeni Yobomi Kwiindawo Ezinobushushu Obuphezulu: Iindawo zegumbi leseva ye-AI zihlala ziindawo ezinobushushu obuphezulu, zibeka uxinzelelo olukhulu kulawulo lobushushu bombane. Ukusebenza kwe-capacitor ye-450V/1400μF phantsi komngeni wobomi obuphezulu be-105℃ kuchaphazela ngokuthe ngqo ukuthembeka kwenkqubo ixesha elide.

③ Iimfuneko Zokusebenza Phantsi Kwendlela Yokusebenzisa Umbane Ongaphezulu: Ngenxa yokwamkelwa ngokubanzi kwezixhobo ezintsha zamandla ezifana neGaN/SiC, amaza okutshintsha umbane ayanda rhoqo, nto leyo ebeka iimfuno eziphezulu kwi-ESR kunye nokukwazi ukusebenza kwe-ripple current kwee-capacitors ukuphepha umngcipheko wokungasebenzi kwenkqubo.

I-YMIN IDC3

Ukuchaza ngokutsha iMida yokuSebenza kweeCapacitors zeVoltage eziphezulu ngeTekhnoloji

Ukujongana nemingeni ekhankanyiweyo apha ngasentla, uthotho lwe-YMIN IDC3 lufikelele kwimpumelelo epheleleyo kwiinkalo ezintathu: izixhobo, ulwakhiwo, kunye nenkqubo:

1. Uguquko loxinano: Ukwanda komthamo nge-70% ngaphakathi kwe-Φ30×70mm

Ukusebenzisa iphakheji encinci ye-capacitor enobume be-Φ30×70mm, amandla aphezulu e-450V/1400μF afezekiswa ngaphakathi kwemida eqhelekileyo yokuphakama kombane we-1U server. Xa kuthelekiswa neemveliso zemveli zobukhulu obufanayo, amandla anyuswa ngaphezulu kwe-70% (xa kuthelekiswa noluhlu oluqhelekileyo lomthamo wee-capacitors ezisetyenziswa rhoqo ze-Φ30×70mm, ezingamanzi ze-450V ezinobume be-horn kushishino), nto leyo ephelisa ngempumelelo impikiswano phakathi koxinano oluphezulu lomthamo kunye nendawo.

2. Ukuphumelela kobomi: Ukuqina Kuvavanyiwe kwi-105℃

Ngokusebenzisa ukwenziwa kwe-electrolyte ephuculiweyo kunye nesakhiwo se-anode foil, uthotho lwe-IDC3 lubonisa ukusebenza kakuhle komthwalo phantsi kweemeko ezinzima ze-105℃. Olu yilo luvumela ii-capacitors ukuba zigcine uzinzo lwexesha elide kwindawo enobushushu obuphezulu beziko ledatha, zijongana ngokulula nomngeni woshishino wobomi obufutshane ngenxa yobushushu obuphezulu.

3. Ukuguquguquka Okuqhelekileyo: Kwenzelwe i-GaN/SiC Era

Isebenzisa uyilo lwe-ESR ephantsi, inokumelana nomsinga ophezulu we-ripple kwi-120kHz. Olu phawu luvumela uthotho lwe-IDC3 ukuba luzivumelanise ngcono ne-high-frequency switching topologys ngokusekelwe kwi-GaN (Gallium Nitride)/SiC (Silicon Carbide) (phantsi kweenkcukacha zedatha), inika inkxaso enamandla yokuphucula ukusebenza kakuhle kwezixhobo zamandla ezinamandla aphezulu. Ngokungafaniyo nokukhethwa kwe-capacitor yebhasi yendabuko egxile kakhulu kwi-low-frequency ripple, izixhobo zamandla ezinamandla aphezulu kwiiplatifomu ze-GaN/SiC zifuna ukuqinisekiswa ngaxeshanye kwe-ESR kunye nobuchule bamandla e-ripple aphezulu phantsi kweenkcukacha zedatha.

Qaphela: Iiparameter eziphambili kweli nqaku zivela kwiUthotho lwe-YMIN IDC3ishiti yedatha/ingxelo yovavanyo; ngaphandle kokuba kuchazwe ngenye indlela, i-ESR/i-ripple current ichazwe ngokweenkcukacha zeshiti yedatha (umz., i-120kHz), kwaye inguqulelo yamva nje yeshiti yedatha iya kusebenza.

Ubuchule Bokubambisana: Ukuthembeka kunye nokuqinisekiswa kokusebenza ukusuka kwi-4.5kW ukuya kwi-12kW

I-YMIN igcina intsebenziswano enzulu yobugcisa kunye nabavelisi be-semiconductor yamandla e-GaN abaphambili kushishino abanjengoNavitas (ngokolwazi loluntu). Kwiiprojekthi zobonelelo lwamandla kwi-AI server eziqala kwi-4.5kW ukuya kwi-12kW kunye namanqanaba aphezulu amandla, ii-capacitors ze-aluminium electrolytic ze-IDC3 series ezine-voltage ephezulu zibonakalise ukusebenza okugqwesileyo.

Le modeli yophuhliso lwentsebenziswano ayiqinisekisi nje kuphela ukuthembeka kwemveliso kodwa ikwabonelela ngesiseko esiqinileyo sobugcisa sokuqhubeka nokuguquka kwezixhobo zamandla zeseva ye-AI. Uthotho lwe-IDC3 lwe-YMIN lube sisisombululo esithandwayo kwiiprojekthi ezininzi zeseva ye-AI ephezulu (ngokolwazi loluntu), kunye nokusebenza okufana neebhrendi eziphambili zamazwe ngamazwe.

Okungaphezulu KweeMveliso Nje: Indlela i-YMIN Ebonelela Ngayo Izisombululo Zenqanaba Lenkqubo Kwiiseva ze-AI

Kwixesha lokukhula ngamandla kwi-AI computing power, ukuthembeka kweenkqubo zombane kubaluleke kakhulu. I-YMIN Electronics iyaziqonda ngokunzulu iimfuno ezingqongqo zoyilo lombane we-AI server kwaye inika ishishini isisombululo esipheleleyo esilinganisela uxinano oluphezulu, ubomi obude, kunye nokuthembeka okuphezulu kuthotho lwe-IDC3.

Oku kulandelayo sisalathiso esiqhelekileyo sokukhetha ii-capacitor ze-aluminium electrolytic ze-IDC3 series high-voltage liquid snap-on (substrate self-supporting) kwizixhobo zamandla ze-AI server, ezikunceda ukuba ulungelelanise iimfuno zenkqubo ngokukhawuleza:

Itheyibhile 1: Ii-IDC3 Series High-Voltage Liquid Snap-on Capacitors – Iingcebiso zokukhetha

Uhlobo lweCapacitor Imilo Uthotho Ubomi bobushushu I-Voltage Elinganisiweyo (i-Voltage Yokunyuka) Umthamo oqhelekileyo (μF) Ubukhulu beMveliso ΦD*L (mm) Umbala omdaka (120Hz) I-ESR (mΩ / 120kHz) I-Ripple Current elinganisiweyo (mA/120kHz) Umsinga wokuvuza (mA)
I-Aluminium Electrolytic Capacitor (Ulwelo) Uhlobo lokuma lwe-substrate IDC3 105°C, 3000H 450 (ukunyuka kwe-500V) 1000 30 * 60 0.15 301 1960 940
IDC3 105°C, 3000H 450 (ukunyuka kwe-500V) 1200 30 * 65 0.15 252 2370 940
IDC3 105°C, 3000H 450 (ukunyuka kwe-500V) 1400 30 * 70 0.15 215 2750 940
IDC3 105°C, 3000H 450 (ukunyuka kwe-500V) 1600 30 * 80 0.15 188 3140 940
IDC3 105°C, 3000H 475 (ukunyuka kwe-525V) 1100 30 * 65 0.2 273 2360 940
IDC3 105°C, 3000H 500 (ukunyuka kwe-550V) 1300 30 * 75 0.2 261 3350 940
IDC3 105°C, 3000H 500 (ukunyuka kwe-550V) 1500 30 * 85 0.2 226 3750 940
IDC3 105°C, 3000H 500 (ukunyuka kwe-550V) 1700 30 * 95 0.2 199 4120 940

Uyilo Alupheli: I-YMIN Iyaqhubeka Nokubonelela Ngombane Ozinzileyo kwiZiseko zoBuchule be-AI

Ngexesha lamandla ekhompyutha, umbane ozinzileyo ubalulekile. I-YMIN Electronics, kunye nee-capacitor zayo ze-aluminium electrolytic ze-IDC3 series high-voltage liquid snap-on njengesiseko, isoloko inika inkxaso ethembekileyo ye-capacitor kwiziseko zekhompyutha ze-AI. Asiboneleli nje kuphela ngeemveliso, kodwa sikwabonelela ngezisombululo ezikumgangatho wenkqubo ezisekelwe kulwazi olunzulu lwetekhnoloji.

Xa uyila izixhobo zamandla zeseva ye-AI yesizukulwana esilandelayo, i-YMIN ikulungele ukukunceda udlule kwimida yoyilo ngobuchule betekhnoloji kwaye uqhube kunye ngamandla ekhompyutha.

Icandelo le-Q&A

Q: Ii-capacitor ze-YMIN ze-IDC3 series high-voltage zizisombulula njani iindawo ezibuhlungu zezixhobo zamandla ze-AI server?

A: Ii-capacitor ze-aluminium ze-electrolytic ze-YMIN IDC3 series ezine-voltage ephezulu zibonelela ngezisombululo ezivela kwiinkalo ezintathu:

① Uyilo oluxineneyo – Ukufikelela kwi-450V/1400μF capacitance ephezulu ngaphakathi kobukhulu be-Φ30×70mm, ukwandisa umthamo ngaphezulu kwe-70% xa kuthelekiswa neemveliso zobukhulu obufanayo, ukusombulula ingxabano phakathi kwendawo kunye nomthamo;

② Ubomi obude obuphezulu obusebenza ngobushushu obuphezulu – I-electrolyte kunye nesakhiwo se-anode esilungisiweyo zigcina ubomi bomthwalo obuziiyure ezingama-3000 kwi-105℃, nto leyo ephucula ukuthembeka kwenkqubo ixesha elide;

③ Ukuhambelana kwamaza aphezulu – Ukusebenzisa uyilo oluphantsi lwe-ESR, oluxhasa ukusebenza kwamaza aphezulu e-120kHz, kunye nombane we-ripple weseli enye ongaphezulu kwe-4.12A (500V/1700μF, 120kHz; 450V/1400μF malunga ne-2.75A, jonga itheyibhile yokukhetha ekupheleni), iyahambelana ne-GaN/SiC high-frequency topologies, iququzelela uyilo lombane oluphezulu.

Isishwankathelo ekupheleni koxwebhu

Imeko ezisebenzayo: Umbane we-AI server uyilo lwe-AC-DC front-end, inkqubo yombane ephambili yeziko ledatha, umbane we-1U high-density rack-mount server, umbane we-GaN/SiC-based high-frequency switching, umbane we-AI computing density (4.5kW-12kW+)

Iingenelo ezingundoqo:

① Ubukhulu: Uxinano lweSithuba, Inkcazo: Ifikelela kwi-450V/1400μF ngaphakathi kobukhulu be-Φ30×70mm, kunye nokwanda komthamo okungaphezulu kwe-70% xa kuthelekiswa nobukhulu obufanayo, obuhambelana nemida yokuphakama kweseva ye-1U.

② Ubukhulu: Ixesha lokusebenzisa ubushushu obuphezulu, Inkcazo: Ngaphezulu kweeyure ezingama-3000 zobomi bomthwalo kwi-105℃, zifanelekile kwiindawo zokusebenza ezinobushushu obuphezulu kumaziko edatha.

③ Ubukhulu: Ukusebenza kweFrequency ephezulu, Inkcazo: Uyilo lwe-ESR oluphantsi, lunokumelana nomsinga ophezulu we-ripple kwi-frequency ephezulu ye-120KHz, oluhambelana ne-GaN/SiC high-frequency topologies.

④ Ubukhulu: Ukuqinisekiswa kwenkqubo, Inkcazo: Isebenzisana nabavelisi abanjengoNavitas, ifanelekile kwiiprojekthi zombane zeseva ye-AI ye-4.5kW ukuya kwi-12kW+.

Iimodeli ezicetyiswayo

Uthotho I-Voltage Umthamo Ubukhulu Umsebenzi wobomi Iimbonakalo
IDC3 450V (ukunyuka kwe-500V) 1400 μF Φ30×70mm 105℃/3000 iiyure Uxinano oluphezulu lwe-capacitance, olufanelekileyo kuyilo oluqhelekileyo lwamandla e-1U
IDC3 500V (ukunyuka kwe-550V) 1500 μF Φ30×85mm 105℃/3000 iiyure Uvavanyo lwe-voltage ephezulu, ifanelekile kwii-topology zombane ophezulu
IDC3 450V (ukunyuka kwe-500V) 1000 – 1600 μF Φ30×60 – 80mm 105℃/3000 iiyure Iigradients ezininzi zomthamo ziyafumaneka, ezifanelekileyo kwiimfuno ezahlukeneyo zecandelo lamandla

Indlela yokukhetha amanyathelo amathathu:

Inyathelo 1: Khetha umlinganiselo we-voltage yokumelana ngokusekelwe kwi-voltage yebhasi kwaye uvumele umda wokwehla (umz., 450–500V).

Inyathelo lesi-2: Khetha iinkcukacha zobomi benkonzo ngokusekelwe kubushushu obungqongileyo kunye noyilo lobushushu (umz., 105℃/3000h) kwaye uvavanye ukunyuka kobushushu.

Inyathelo lesi-3: Tshatisa ubukhulu ngokwemida yokuphakama/ububanzi besithuba (umz., Φ30×70mm) kwaye uqinisekise umsinga we-ripple kunye neenkcukacha ze-ESR.


Ixesha leposi: Jan-26-2026