I-GaN, i-SiC, kunye ne-Si kwiTekhnoloji yaMandla: Ukuhamba ngekamva le-High-Performance Semiconductors

Intshayelelo

Itekhnoloji yamandla lilitye lembombo lezixhobo zombane zanamhlanje, kwaye njengoko itekhnoloji ihambela phambili, imfuno yokusebenza kwenkqubo yamandla ephuculweyo iyaqhubeka nokukhula. Kulo mongo, ukhetho lwemathiriyeli ye-semiconductor lubalulekile. Ngelixa i-silicon (Si) i-semiconductors yendabuko isasetyenziswa ngokubanzi, izinto ezikhulayo ezifana ne-Gallium Nitride (GaN) kunye ne-Silicon Carbide (SiC) ziya zisanda kuzuza ukuvelela kubuchwepheshe bokusebenza kwamandla aphezulu. Eli nqaku liza kuphonononga umahluko phakathi kwezi zixhobo zintathu kubuchwepheshe bamandla, iimeko zesicelo sabo, kunye neendlela zangoku zentengiso ukuqonda ukuba kutheni i-GaN kunye ne-SiC zisiba ziyimfuneko kwiinkqubo zamandla ezizayo.

1. I-Silicon (Si) - I-Traditional Power Semiconductor Material

1.1 Iimpawu kunye nezinto eziluncedo
I-silicon yimathiriyeli yobuvulindlela kwintsimi ye-semiconductor yamandla, kunye namashumi eminyaka yokusetyenziswa kwishishini le-elektroniki. Izixhobo ezisekelwe kwi-Si zibonakalisa iinkqubo zokwenziwa kwabantu abadala kunye nesiseko esibanzi sesicelo, esinika iingenelo ezifana neendleko eziphantsi kunye nekhonkco lokubonelela olusekwe kakuhle. Izixhobo ze-silicon zibonakalisa ukuguquguquka kombane okulungileyo, okuzenza zilungele usetyenziso lwezixhobo zombane zamandla ahlukeneyo, ukusuka kumbane wamandla asezantsi ukuya kwiinkqubo zamashishini anamandla amakhulu.

1.2 Imida
Nangona kunjalo, njengoko imfuno yokusebenza okuphezulu kunye nokusebenza kwiinkqubo zamandla ikhula, imida yezixhobo ze-silicon ibonakala. Okokuqala, i-silicon iqhuba kakubi phantsi kweemeko eziphezulu kunye neemeko zokushisa okuphezulu, okukhokelela ekulahlekeni kwamandla okwandayo kunye nokunciphisa ukusebenza kwenkqubo. Ukongeza, i-silicon esezantsi ye-thermal conductivity yenza ukuba ulawulo lwe-thermal lube ngumngeni kwizicelo zamandla aphezulu, ezichaphazela ukuthembeka kwenkqubo kunye nobomi.

1.3 IiNdawo zokuSebenza
Ngaphandle kwale mingeni, izixhobo ze-silicon zihlala zilawula kwizicelo ezininzi zemveli, ngakumbi kwii-elektroniki zabathengi ezingabizi kakhulu kunye ne-low-to-mid-power applications ezifana nabaguquli be-AC-DC, abaguquli be-DC-DC, izixhobo zasekhaya, kunye nezixhobo zekhompyutha zomntu.

2. I-Gallium Nitride (i-GaN) - Isixhobo esisakhulayo sokuSebenza ngokuPhezulu

2.1 Iimpawu kunye nezinto eziluncedo
I-Gallium Nitride yi-bandgap ebanziisemiconductorizinto ezibonakalayo ngummandla wokuqhekeka okuphezulu, ukuhamba kwe-electron ephezulu, kunye nokumelana okuphantsi. Xa kuthelekiswa ne-silicon, izixhobo ze-GaN zinokusebenza kumaza aphezulu, zinciphisa kakhulu ubungakanani bamacandelo asebenzayo kunikezelo lwamandla kunye nokwandisa ukuxinana kwamandla. Ngapha koko, izixhobo ze-GaN zinokuphucula kakhulu ukusebenza kwenkqubo yamandla ngenxa yokuqhutywa kwazo okuphantsi kunye neelahleko zokutshintsha, ngakumbi kumandla aphakathi ukuya kumandla aphantsi, usetyenziso olukwi-frequency ephezulu.

2.2 Imida
Ngaphandle kweenzuzo ezibalulekileyo zokusebenza kwe-GaN, iindleko zayo zokuvelisa zihlala ziphezulu, zinciphisa ukusetyenziswa kwayo kwizicelo eziphezulu apho ukusebenza kunye nobukhulu bubaluleke kakhulu. Ukongeza, itekhnoloji ye-GaN isekwinqanaba lokuqala lophuhliso, kunye nokuthembeka kwexesha elide kunye nokuvuthwa kwemveliso enkulu efuna ukuqinisekiswa ngakumbi.

2.3 IiNdawo zokuSebenza
Izixhobo ze-GaN ze-high-frequency kunye ne-high-effective features ziye zakhokelela ekwamkelweni kwazo kwiindawo ezininzi ezivelayo, kubandakanywa iitshaja ezikhawulezayo, izixhobo zombane zonxibelelwano ze-5G, ii-inverters ezisebenzayo, kunye ne-aerospace electronics. Njengoko iteknoloji ihambela phambili kunye namaxabiso ehla, i-GaN ilindeleke ukuba idlale indima ebaluleke ngakumbi kuluhlu olubanzi lwezicelo.

3. I-Silicon Carbide (i-SiC) - Isixhobo esiKhethekileyo kwi-High-Voltage Application

3.1 Iimpawu kunye nezinto eziluncedo
I-Silicon Carbide yenye imathiriyeli ye-bandgap ebanzi ye-semiconductor enendawo eyophukayo ephezulu kakhulu, i-thermal conductivity, kunye ne-electron saturation velocity kune-silicon. Izixhobo ze-SiC zigqwesa kwi-high-voltage kunye nezicelo zamandla aphezulu, ngokukodwa kwiimoto zombane (EVs) kunye ne-inverters ye-industrial. Ukunyamezela kwamandla ombane aphezulu e-SiC kunye nelahleko ephantsi yokutshintsha kuyenza ibe lolona khetho lufanelekileyo loguqulo olusebenzayo kunye nokuxinana kwamandla.

3.2 Imida
Ngokufana ne-GaN, izixhobo ze-SiC zibiza kakhulu ukwenza, kunye neenkqubo zokuvelisa eziyinkimbinkimbi. Oku kunciphisa ukusetyenziswa kwabo kwizicelo zexabiso eliphezulu ezifana neenkqubo zamandla e-EV, iinkqubo zamandla ahlaziyekayo, ii-inverters eziphezulu ze-voltage, kunye nezixhobo zegridi ezihlakaniphile.

3.3 IiNdawo zokuSebenza
Iimpawu ze-SiC ezisebenzayo, eziphezulu ze-voltage zenza ukuba zisebenze ngokubanzi kwizixhobo zombane ze-elektroniki ezisebenza kumandla aphezulu, kwiindawo ezinobushushu obuphezulu, njengee-inverters ze-EV kunye neetshaja, ii-inverters zelanga ezinamandla aphezulu, iinkqubo zamandla omoya, kunye nokunye. Njengoko imfuno yemarike ikhula kwaye iteknoloji ihambela phambili, ukusetyenziswa kwezixhobo ze-SiC kule mimandla kuya kuqhubeka nokwandisa.

I-GaN, i-SiC, i-Si kwi-teknoloji yokubonelela ngombane

4. Uhlalutyo lweNtengiso yeMarike

4.1 Ukukhula ngokukhawuleza kweeMarike ze-GaN kunye ne-SiC
Okwangoku, imakethi yetekhnoloji yamandla iqhuba utshintsho, ngokuthe ngcembe isuka kwizixhobo ze-silicon zemveli ukuya kwizixhobo ze-GaN kunye ne-SiC. Ngokweengxelo zophando lwentengiso, intengiso yezixhobo ze-GaN kunye ne-SiC ikhula ngokukhawuleza kwaye kulindeleke ukuba iqhubeke nomkhondo wayo wokukhula okuphezulu kwiminyaka ezayo. Lo mkhwa uqhutywa ikakhulu zizinto ezininzi:

- **Ukunyuka kweZithuthi zoMbane **: Njengoko imarike ye-EV ikhula ngokukhawuleza, imfuno ye-high-effective, i-high-voltage power semiconductors iyanda kakhulu. Izixhobo ze-SiC, ngenxa yokusebenza kwazo okuphezulu kwii-high-voltage applications, ziye zaba yinto ekhethiweyo yokukhethaIinkqubo zamandla e-EV.
- **Uphuhliso lwaMandla aVuselelwayo**: Iisistim zokuvelisa amandla ahlaziyekayo, ezifana namandla elanga kunye namandla omoya, zifuna ubugcisa bokuguqula amandla obusebenzayo. Izixhobo ze-SiC, kunye nokusebenza kwazo okuphezulu kunye nokuthembeka, zisetyenziswa ngokubanzi kwezi nkqubo.
- **Ukuphuculwa koMthengi we-Electronics**: Njengoko abathengi bombane njengee-smartphones kunye neelaptops ziguqukela ekusebenzeni okuphezulu kunye nobomi bebhetri obude, izixhobo ze-GaN ziya zimkelwa ngakumbi kwiitshaja ezikhawulezayo kunye neeadaptha zamandla ngenxa yezandi zazo eziphezulu kunye neempawu ezisebenza ngempumelelo.

4.2 Kutheni ukhetha i-GaN kunye ne-SiC
Ukuqwalaselwa ngokubanzi kwi-GaN kunye ne-SiC kubangelwa ngokuyinhloko ekusebenzeni kwabo okuphezulu kwizixhobo ze-silicon kwizicelo ezithile.

- **Ukusebenza okuPhezulu**: Izixhobo ze-GaN kunye ne-SiC zigqwesa kwi-high-frequency kunye ne-high-voltage applications, ukunciphisa kakhulu ukulahlekelwa kwamandla kunye nokuphucula ukusebenza kakuhle kwenkqubo. Oku kubaluleke kakhulu kwizithuthi zombane, amandla avuselelekayo, kunye nombane osebenza kakhulu wabathengi.
- **Ubungakanani obuncinci**: Ngenxa yokuba izixhobo ze-GaN kunye ne-SiC zinokusebenza kwiifrikhwensi eziphezulu, abayili bamandla banokunciphisa ubungakanani bamacandelo angenayo, ngaloo ndlela bacuthe ubungakanani benkqubo yamandla ngokubanzi. Oku kubalulekile kwizicelo ezifuna ukwenziwa kweminiaturization kunye noyilo olukhaphukhaphu, olufana nomthengi wombane kunye nezixhobo ze-aerospace.
- **Ukwenyuka kokuthembeka **: Izixhobo ze-SiC zibonisa ukuzinza okukhethekileyo kwe-thermal kunye nokuthembeka kwiqondo eliphezulu lobushushu, i-high-voltage bume, ukunciphisa imfuno yokupholisa kwangaphandle kunye nokwandisa ubomi besixhobo.

5. Isiphelo

Kwinguquko yetekhnoloji yamandla yale mihla, ukhetho lwemathiriyeli ye-semiconductor luchaphazela ngokuthe ngqo ukusebenza kwenkqubo kunye nokusetyenziswa okunokwenzeka. Ngelixa i-silicon isalawula imarike yezicelo zamandla emveli, itekhnoloji ye-GaN kunye ne-SiC ngokukhawuleza iba lolona khetho lufanelekileyo lweenkqubo zamandla ezisebenzayo, ezinoxinano oluphezulu, kunye nokuthembeka okuphezulu njengoko zikhula.

I-GaN ingena ngokukhawuleza kumthengiizinto zombanekunye namacandelo onxibelelwano ngenxa yeempawu eziphezulu kunye neempawu eziphezulu, ngelixa i-SiC, kunye neenzuzo zayo ezikhethekileyo kwi-high-voltage, izicelo zamandla aphezulu, ziba yinto ebalulekileyo kwizithuthi zombane kunye neenkqubo zamandla avuselelekayo. Njengoko iindleko ziyancipha kunye nokuhambela phambili kweteknoloji, i-GaN kunye ne-SiC kulindeleke ukuba ithathe indawo yezixhobo ze-silicon kuluhlu olubanzi lwezicelo, ukuqhuba iteknoloji yamandla kwisigaba esitsha sophuhliso.

Olu tshintsho lukhokelwa yi-GaN kunye ne-SiC aluzukutshintsha kuphela indlela eziyilwe ngayo iinkqubo zamandla kodwa lukwachaphazela ngokunzulu amashishini amaninzi, ukusuka kubathengi be-elektroniki ukuya kulawulo lwamandla, lubaqhubela ekusebenzeni okuphezulu kunye nemikhombandlela ehambelana nokusingqongileyo.


Ixesha lokuposa: Aug-28-2024